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arXiv · 1409.4733

Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

Sianxin Wu·Xia Dai·Hongyi Yu·Heng Fan·Jiangping Hu·Wang Yao
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Abstract

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.

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Sianxin Wu, Xia Dai, Hongyi Yu, Heng Fan, Jiangping Hu, Wang Yao. 2014-09-16. Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS). https://arxiv.org/abs/1409.4733

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