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arXiv · 1407.6880

Interface induced states at the boundary between a 3D topological insulator Bi$_2$Se$_3$ and a ferromagnetic insulator EuS

S. V. Eremeev·V. N. Men'shov·V. V. Tugushev·E. V. Chulkov
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Abstract

By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi$_2$Se$_3$/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi$_2$Se$_3$ film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu doping on the magnetization of the Bi$_2$Se$_3$ film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi$_2$Se$_3$ heterostructure are discussed.

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S. V. Eremeev, V. N. Men'shov, V. V. Tugushev, E. V. Chulkov. 2014-07-25. Interface induced states at the boundary between a 3D topological insulator Bi$_2$Se$_3$ and a ferromagnetic insulator EuS. https://doi.org/10.1016/j.jmmm.2014.09.029

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