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arXiv · 1406.7082

Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

Hai-Ou Li·Gang Cao·Ming Xiao·Jie You·Da Wei·Tao Tu·Guang-Can Guo·Hong-Wen Jiang·Guo-Ping Guo
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Abstract

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

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Hai-Ou Li, Gang Cao, Ming Xiao, Jie You, Da Wei, Tao Tu, Guang-Can Guo, Hong-Wen Jiang, Guo-Ping Guo. 2014-06-27. Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device. https://doi.org/10.1063/1.4900915

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