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arXiv · 1406.5371

Photoluminescence of focused ion beam implanted Er$^{3+}$:Y$_{2}$SiO$_{5}$ crystals

Nadezhda Kukharchyk·Shovon Pal·Jasper Rödiger·Arne Ludwig·Sebastian Probst·Alexey Ustinov·Pavel Bushev·Andreas Dirk Wieck
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Abstract

Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er$^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er$^{3+}$:Y$_2$SiO$_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.

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Nadezhda Kukharchyk, Shovon Pal, Jasper Rödiger, Arne Ludwig, Sebastian Probst, Alexey Ustinov, Pavel Bushev, Andreas Dirk Wieck. 2014-06-20. Photoluminescence of focused ion beam implanted Er$^{3+}$:Y$_{2}$SiO$_{5}$ crystals. https://doi.org/10.1002/pssr.201409304

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