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arXiv · 1406.4992

Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers

K. Levchenko·T. Andrearczyk·J. Z. Domagala·T. Wosinski·T. Figielski·J. Sadowski
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Abstract

High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.

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K. Levchenko, T. Andrearczyk, J. Z. Domagala, T. Wosinski, T. Figielski, J. Sadowski. 2014-06-19. Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers. https://doi.org/10.12693/aphyspola.126.1121

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