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arXiv · 1406.1726

Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in Pb$_{1-x}$Sn$_x$Se

Xiaoxiang Xi·Xu-Gang He·Fen Guan·Zhenxian Liu·R. D. Zhong·J. A. Schneeloch·T. S. Liu·G. D. Gu·D. Xu·Z. Chen·X. G. Hong·Wei Ku·G. L. Carr
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Abstract

The characteristics of topological insulators are manifested in both their surface and bulk properties, but the latter remain to be explored. Here we report bulk signatures of pressure-induced band inversion and topological phase transitions in Pb$_{1-x}$Sn$_x$Se ($x=$0.00, 0.15, and 0.23). The results of infrared measurements as a function of pressure indicate the closing and the reopening of the band gap as well as a maximum in the free carrier spectral weight. The enhanced density of states near the band gap in the topological phase give rise to a steep interband absorption edge. The change of density of states also yields a maximum in the pressure dependence of the Fermi level. Thus our conclusive results provide a consistent picture of pressure-induced topological phase transitions and highlight the bulk origin of the novel properties in topological insulators.

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Xiaoxiang Xi, Xu-Gang He, Fen Guan, Zhenxian Liu, R. D. Zhong, J. A. Schneeloch, T. S. Liu, G. D. Gu, D. Xu, Z. Chen, X. G. Hong, Wei Ku, G. L. Carr. 2014-06-06. Bulk Signatures of Pressure-Induced Band Inversion and Topological Phase Transitions in Pb$_{1-x}$Sn$_x$Se. https://doi.org/10.1103/physrevlett.113.096401

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