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arXiv · 1406.0887

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

J. -H. Chen·G. Autès·N. Alem·F. Gargiulo·A. Gautam·M. Linck·C. Kisielowski·O. V. Yazyev·S. G. Louie·A. Zettl
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Abstract

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

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J. -H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie, A. Zettl. 2014-06-03. Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering. https://doi.org/10.1103/physrevb.89.121407

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