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arXiv · 1405.5692

Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi$_2$Se$_3$

Jack Hellerstedt·Mark Edmonds·J. H. Chen·William G. Cullen·C. X. Zheng·Michael S. Fuhrer
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Abstract

Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$ cm$^{-2}$) at the onset of film conduction, and bulk dopant density of $\sim$5 x 10$^{18}$ cm$^{-3}$, roughly independent of growth temperature profile. Mobility depends more strongly on the growth temperature and is related to the crystalline quality of the samples quantified by \emph{ex-situ} AFM measurements. These results indicate that Bi$_2$Se$_3$ as prepared by widely employed parameters is \emph{n}-doped before exposure to atmosphere, the doping is largely interfacial in origin, and dopants are not the limiting disorder in present Bi$_2$Se$_3$ films.

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Jack Hellerstedt, Mark Edmonds, J. H. Chen, William G. Cullen, C. X. Zheng, Michael S. Fuhrer. 2014-05-22. Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi$_2$Se$_3$. https://doi.org/10.1063/1.4900749

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