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arXiv · 1405.1087

Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells

M. A. Zudov·O. A. Mironov·Q. A. Ebner·P. D. Martin·Q. Shi·D. R. Leadley
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Abstract

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

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M. A. Zudov, O. A. Mironov, Q. A. Ebner, P. D. Martin, Q. Shi, D. R. Leadley. 2014-05-05. Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells. https://doi.org/10.1103/physrevb.89.125401

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