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arXiv · 1403.7775

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

F. Dettwiler·P. Fallahi·D. Scholz·E. Reiger·D. Schuh·A. Badolato·W. Wegscheider·D. M. Zumbühl
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Abstract

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.

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F. Dettwiler, P. Fallahi, D. Scholz, E. Reiger, D. Schuh, A. Badolato, W. Wegscheider, D. M. Zumbühl. 2014-03-30. Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics. https://arxiv.org/abs/1403.7775

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