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arXiv · 1403.6388

Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

Bowen Zhi·Guanyin Gao·Haoran Xu·Feng Chen·Xuelian Tan·Pingfan Chen·Lingfei Wang·Wenbin Wu
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Abstract

The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

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Bowen Zhi, Guanyin Gao, Haoran Xu, Feng Chen, Xuelian Tan, Pingfan Chen, Lingfei Wang, Wenbin Wu. 2014-04-26. Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures. https://doi.org/10.1021/am405767q

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