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arXiv · 1403.0148

Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers

X. Zhou·L. Ma·Z. Shi·W. J. Fan·R. F. L. Evans·R. W. Chantrell·S. Mangin·H. W. Zhang·S. M. Zhou
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Abstract

In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.

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X. Zhou, L. Ma, Z. Shi, W. J. Fan, R. F. L. Evans, R. W. Chantrell, S. Mangin, H. W. Zhang, S. M. Zhou. 2014-10-08. Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers. https://arxiv.org/abs/1403.0148

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