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arXiv · 1401.7605

Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells

Yang Liu·A. L. Graninger·S. Hasdemir·M. Shayegan·L. N. Pfeiffer·K. W. West·K. W. Baldwin·R. Winkler
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Abstract

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ν=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Ψ_{331}$) state.

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Yang Liu, A. L. Graninger, S. Hasdemir, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler. 2014-01-29. Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells. https://doi.org/10.1103/physrevlett.112.046804

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