Metal oxide resistive switching: evolution of the density of states across the metal-insulator transition

Abstract

We report the study of metal-STO-metal memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the Density Of States (DoS) can be followed continuously across the Metal-Insulator Transition (MIT). At very low dopant concentration, the junction displays characteristic signatures of discrete dopants levels. As the dopant concentration increases, the semiconductor band gap fills in but a soft Coulomb gap remains. At even higher doping, a transition to a metallic state occurs where the DoS at the Fermi level becomes finite and Altshuler-Aronov corrections to the DoS are observed. At the critical point of the MIT, the DoS scales linearly with energy $N(\varepsilon) \sim \varepsilon$, the possible signature of multifractality.