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arXiv · 1401.0902

Electron-hole pairing in graphene-GaAs heterostructures

A. Gamucci·D. Spirito·M. Carrega·B. Karmakar·A. Lombardo·M. Bruna·A. C. Ferrari·L. N. Pfeiffer·K. W. West·Marco Polini·V. Pellegrini
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Abstract

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.

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A. Gamucci, D. Spirito, M. Carrega, B. Karmakar, A. Lombardo, M. Bruna, A. C. Ferrari, L. N. Pfeiffer, K. W. West, Marco Polini, V. Pellegrini. 2014-01-05. Electron-hole pairing in graphene-GaAs heterostructures. https://doi.org/10.1038/ncomms6824

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