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arXiv · 1312.6637

Temperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6

J. D. Denlinger·J. W. Allen·J. -S. Kang·K. Sun·J. -W. Kim·J. H. Shim·B. I. Min·Dae-Jeong Kim·Z. Fisk
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Abstract

Taken together and viewed holistically, recent theory, low temperature (T) transport, photoelectron spectroscopy and quantum oscillation experiments have built a very strong case that the paradigmatic mixed valence insulator SmB6 is currently unique as a three-dimensional strongly correlated topological insulator (TI). As such, its many-body T-dependent bulk gap brings an extra richness to the physics beyond that of the weakly correlated TI materials. How will the robust, symmetry-protected TI surface states evolve as the gap closes with increasing T? For SmB6 exploiting this opportunity first requires resolution of other important gap-related issues, its origin, its magnitude, its T-dependence and its role in bulk transport. In this paper we report detailed T-dependent angle resolved photoemission spectroscopy (ARPES) measurements that answer all these questions in a unified way.

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J. D. Denlinger, J. W. Allen, J. -S. Kang, K. Sun, J. -W. Kim, J. H. Shim, B. I. Min, Dae-Jeong Kim, Z. Fisk. 2013-12-23. Temperature Dependence of Linked Gap and Surface State Evolution in the Mixed Valent Topological Insulator SmB6. https://arxiv.org/abs/1312.6637

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