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arXiv · 1312.4808

Signature of the topological surface state in the thermoelectric properties of Bi$_2$Te$_3$

F. Rittweger·N. F. Hinsche·P. Zahn·I. Mertig
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Abstract

We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi$_2$Te$_3$ films. Conductivity and thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Bulk and surface contribution to the transport coefficients are separated by a special projection technique. As a result we show clear signatures of the topological surface state in the thermoelectric properties.

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F. Rittweger, N. F. Hinsche, P. Zahn, I. Mertig. 2013-12-17. Signature of the topological surface state in the thermoelectric properties of Bi$_2$Te$_3$. https://doi.org/10.1103/physrevb.89.035439

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