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arXiv · 1312.2749

Thermionic charge transport in CMOS nano-transistors

A. C. Betz·S. Barraud·Q. Wilmart·B. Plaçais·X. Jehl·M. Sanquer·M. F. Gonzalez - Zalba
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Abstract

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.

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A. C. Betz, S. Barraud, Q. Wilmart, B. Plaçais, X. Jehl, M. Sanquer, M. F. Gonzalez - Zalba. 2013-12-10. Thermionic charge transport in CMOS nano-transistors. https://doi.org/10.1063/1.4863538

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