Bounded weak solutions to matrix drift-diffusion model for spin-coherent electron transport in semiconductors

Ansgar Jüngel; Claudia Negulescu; Polina Shpartko

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arXiv · 1312.2461

Bounded weak solutions to matrix drift-diffusion model for spin-coherent electron transport in semiconductors

Ansgar Jüngel·Claudia Negulescu·Polina Shpartko

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Abstract

The global-in-time existence and uniqueness of bounded weak solutions to a spinorial matrix drift-diffusion model for semiconductors is proved. Developing the electron density matrix in the Pauli basis, the coefficients (charge density and spin-vector density) satisfy a parabolic $4\times 4$ cross-diffusion system. The key idea of the existence proof is to work with different variables: the spin-up and spin-down densities as well as the parallel and perpendicular components of the spin-vector density with respect to the magnetization. In these variables, the diffusion matrix becomes diagonal. The proofs of the $L^\infty$ estimates are based on Stampacchia truncation as well as Moser- and Alikakos-type iteration arguments. The monotonicity of the entropy (or free energy) is also proved. Numerical experiments in one space dimension using a finite-volume discretization indicate that the entropy decays exponentially fast to the equilibrium state.

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Ansgar Jüngel, Claudia Negulescu, Polina Shpartko. 2013-12-09. Bounded weak solutions to matrix drift-diffusion model for spin-coherent electron transport in semiconductors. https://arxiv.org/abs/1312.2461

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