Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

L. A. Tracy; T. W. Hargett; J. L. Reno

doi:10.1063/1.4868971

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arXiv · 1312.1977

Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

L. A. Tracy·T. W. Hargett·J. L. Reno

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Abstract

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

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L. A. Tracy, T. W. Hargett, J. L. Reno. 2013-12-06. Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. https://doi.org/10.1063/1.4868971

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