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arXiv · 1311.2684

Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization

Kalon Gopinadhan·Young Jun Shin·Indra Yudhistira·Jing Niu·Hyunsoo Yang
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Abstract

A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum Hall effect are also observed for the same sample.

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Kalon Gopinadhan, Young Jun Shin, Indra Yudhistira, Jing Niu, Hyunsoo Yang. 2013-11-12. Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization. https://doi.org/10.1103/physrevb.88.195429

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