Optically Controlled Excitonic Transistor

P. Andreakou; S. V. Poltavtsev; J. R. Leonard; E. V. Calman; M. Remeika; Y. Y. Kuznetsova; L. V. Butov; J. Wilkes; M. Hanson; A. C. Gossard

doi:10.1063/1.4866855

arXiv · 1310.7842

Optically Controlled Excitonic Transistor

P. Andreakou·S. V. Poltavtsev·J. R. Leonard·E. V. Calman·M. Remeika·Y. Y. Kuznetsova·L. V. Butov·J. Wilkes·M. Hanson·A. C. Gossard

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Abstract

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.

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P. Andreakou, S. V. Poltavtsev, J. R. Leonard, E. V. Calman, M. Remeika, Y. Y. Kuznetsova, L. V. Butov, J. Wilkes, M. Hanson, A. C. Gossard. 2013-10-29. Optically Controlled Excitonic Transistor. https://doi.org/10.1063/1.4866855

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