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arXiv · 1310.5899

Effect of Epitaxial Strain on Phase Separation in Thin Films

Arka Lahiri·T. A. Abinandanan·M. P. Gururajan·Saswata Bhattacharyya
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Abstract

We examine the role of an imposed epitaxial strain e in enhancing or depressing the spinodal instability of an alloy thin film. Since the alloy film starts with an imposed strain, phase separation offers a mechanism to relieve it, but only when the film is elastically inhomogeneous. With composition-dependence of elastic modulus given by y, and that of lattice parameter by {\eta}, our simulations using the Cahn-Hilliard model show (and analytical results for early stages confirm) that, for (ey/{\eta}) > 0, the imposed strain adds to the driving force for phase separation, decreases the maximally growing wave length, and expands the coherent spinodal in the phase diagram. Further, when (ey/{\eta}) > 0.372, it expands to even outside of chemical spinodal. Phase separation produces islands of elastically softer (harder) phase with (without) a favorable imposed strain. These results are in agreement with experimental results in GeSi thin films on Si and Ge substrates, as well as in InGaAs films on GaAs substrates.

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Arka Lahiri, T. A. Abinandanan, M. P. Gururajan, Saswata Bhattacharyya. 2013-10-22. Effect of Epitaxial Strain on Phase Separation in Thin Films. https://doi.org/10.1080/09500839.2014.968652

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