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arXiv · 1310.4844

Electrically driven spin resonance in silicon carbide color centers

P. V. Klimov·A. L. Falk·B. B. Buckley·D. D. Awschalom
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Abstract

We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-frequency electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.

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P. V. Klimov, A. L. Falk, B. B. Buckley, D. D. Awschalom. 2013-10-17. Electrically driven spin resonance in silicon carbide color centers. https://doi.org/10.1103/physrevlett.112.087601

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