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arXiv · 1310.4051

Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells

Dong-Hui Xu·Jin-Hua Gao·Chao-Xing Liu·Jin-Hua Sun·Fu-Chun Zhang·Yi Zhou
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Abstract

We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value $2e^2/h$ in light dopant concentration, consistent with recent experiments by Du et al. We predict a conductance dip structure due to backward scattering in the region where the localization length $ξ$ is comparable with the sample width $L_y$ but much smaller than the sample length $L_x$.

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Dong-Hui Xu, Jin-Hua Gao, Chao-Xing Liu, Jin-Hua Sun, Fu-Chun Zhang, Yi Zhou. 2014-01-19. Localized States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells. https://doi.org/10.1103/physrevb.89.195104

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