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arXiv · 1310.3590

Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film

Yusheng Hou·Hongjun Xiang·Xingao Gong
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Abstract

By combining genetic algorithm optimizations, first-principles calculations and the double-exchange model studies, we have unveiled that the exotic insulating ferromagnetism in LaMnO3 thin film originates from the previously unreported G-type d_{3z^2-r^2}/d_{x^2-y^2} orbital ordering. An insulating gap opens as a result of both the orbital ordering and the strong electron-phonon coupling. Therefore, there exist two strain induced phase transitions in the LaMnO3 thin film, from the insulating A-type antiferromagnetic phase to the insulating ferromagnetic phase and then to the metallic ferromagnetic phase. These phase transitions may be exploited in tunneling magnetoresistance and tunneling electroresistance related devices.

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Yusheng Hou, Hongjun Xiang, Xingao Gong. 2013-10-14. Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film. https://doi.org/10.1103/physrevb.89.064415

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