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arXiv · 1310.2580

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Liangzhi Kou·Binghai Yan·Feiming Hu·Shu-Chun Wu·Tim O. Wehling·Claudia Felser·Changfeng Chen·Thomas Frauenheim
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Abstract

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

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Liangzhi Kou, Binghai Yan, Feiming Hu, Shu-Chun Wu, Tim O. Wehling, Claudia Felser, Changfeng Chen, Thomas Frauenheim. 2013-10-09. Graphene-based topological insulator with an intrinsic bulk band gap above room temperature. https://doi.org/10.1021/nl4037214

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