Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN

K. M. Borysenko; M. El-Batanouny; E. Bellotti

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arXiv · 1310.0079

Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN

K. M. Borysenko·M. El-Batanouny·E. Bellotti

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Abstract

Selection rules are presented for electron-phonon scattering in GaN with the wurtzite crystal structure. The results are obtained for the interband scattering between the lowest conduction band ($\Gamma$-valley) and the second conduction band ($U$-valley). These selection rules are derived based on the original group-theoretical analysis of the crystal vibrations in GaN, which included detailed compatibility relations for all phonon modes.

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K. M. Borysenko, M. El-Batanouny, E. Bellotti. 2013-09-30. Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN. https://arxiv.org/abs/1310.0079

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