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arXiv · 1309.4410

Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

Rongtao Lu·Alan J. Elliot·Logan Wille·Bo Mao·Siyuan Han·Judy Z. Wu·John Talvacchio·Heidi M. Schulze·Rupert M. Lewis·Daniel J. Ewing·H. F. Yu·G. M. Xue·S. P. Zhao
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Abstract

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.

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Rongtao Lu, Alan J. Elliot, Logan Wille, Bo Mao, Siyuan Han, Judy Z. Wu, John Talvacchio, Heidi M. Schulze, Rupert M. Lewis, Daniel J. Ewing, H. F. Yu, G. M. Xue, S. P. Zhao. 2013-09-17. Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition. https://doi.org/10.1109/tasc.2012.2236591

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