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arXiv · 1308.5763

Creating Magnetic Fields in excess of 1000 T by Misoriented Stacking in a Graphene Bilayer

Wen-Yu He·Ying Su·Mudan Yang·Lin He
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Abstract

It is well established that some kinds of lattice deformations in graphene monolayer, which change electron hopping in sublattice and affect in-plane motion of electrons, may induce out-of-plane pseudo-magnetic fields as large as 100 T. Here, we demonstrate that stacking misorientation in graphene bilayers mimics the effect of huge in-plane pseudo-magnetic fields greater than 1000 T on the interlayer hopping of electrons. As well as addressing the similarity between the effect of in-plane pseudo-magnetic fields and twisting on the electronic band structure of Bernal graphene bilayer, we point out that in-plane magnetic fields (or twisting) could modify the low-energy pseudospin texture of the graphene bilayer (the pseudospin winding number is reduced from 2 to 1), thereby changing the chiralities of quasiparticles from that of spin 1 to spin 1/2. Our results illustrate the possibility of controllably manipulating electronic properties of Bernal graphene bilayer by introducing the in-plane magnetic field or twisting.

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Wen-Yu He, Ying Su, Mudan Yang, Lin He. 2013-10-29. Creating Magnetic Fields in excess of 1000 T by Misoriented Stacking in a Graphene Bilayer. https://doi.org/10.1103/physrevb.89.125418

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