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arXiv · 1308.3128

Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime

Fabrizio Nichele·Atindra Nath Pal·Patrick Pietsch·Thomas Ihn·Klaus Ensslin·Christophe Charpentier·Werner Wegscheider
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Abstract

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.

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Fabrizio Nichele, Atindra Nath Pal, Patrick Pietsch, Thomas Ihn, Klaus Ensslin, Christophe Charpentier, Werner Wegscheider. 2013-12-19. Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime. https://doi.org/10.1103/physrevlett.112.036802

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