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arXiv · 1308.0826

Elemental Topological Insulator with a Tunable Fermi Level: Strained α-Sn on InSb(001)

A. Barfuss·L. Dudy·M. R. Scholz·H. Roth·P. Höpfner·C. Blumenstein·G. Landolt·J. H. Dil·N. C. Plumb·M. Radovic·A. Bostwick·E. Rotenberg·A. Fleszar·G. Bihlmayer·D. Wortmann·G. Li·W. Hanke·R. Claessen·J. Schäfer
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Abstract

We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

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A. Barfuss, L. Dudy, M. R. Scholz, H. Roth, P. Höpfner, C. Blumenstein, G. Landolt, J. H. Dil, N. C. Plumb, M. Radovic, A. Bostwick, E. Rotenberg, A. Fleszar, G. Bihlmayer, D. Wortmann, G. Li, W. Hanke, R. Claessen, J. Schäfer. 2013-09-09. Elemental Topological Insulator with a Tunable Fermi Level: Strained α-Sn on InSb(001). https://doi.org/10.1103/physrevlett.111.157205

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