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arXiv · 1307.1457

Temperature Dependence of the Electrical Transport Properties of Multilayer Graphene

E. S. Sadki·H. Okazaki·T. Watanabe·T. Yamaguchi·Y. Takano
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Abstract

Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM) and Raman Spectroscopy. Electrical terminals are deposited on MLGs in a four-probe configuration by electron-beam lithography, gold/titanium thermal evaporation, and lift-off. The electrical resistance is measured from room temperature down to 2 K. The electrical resistance of the MLGs shows an increase with decreasing temperature, and then decreases after reaching a maximum value. These results are compared with recent experimental and theoretical data from the literature.

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E. S. Sadki, H. Okazaki, T. Watanabe, T. Yamaguchi, Y. Takano. 2014-08-23. Temperature Dependence of the Electrical Transport Properties of Multilayer Graphene. https://arxiv.org/abs/1307.1457

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