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arXiv · 1306.6258

Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

Max Suckert·Felix Hoehne·Lukas Dreher·Markus Kuenzl·Hans Huebl·Martin Stutzmann·Martin S. Brandt
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Abstract

We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.

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Max Suckert, Felix Hoehne, Lukas Dreher, Markus Kuenzl, Hans Huebl, Martin Stutzmann, Martin S. Brandt. 2013-06-26. Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface. https://doi.org/10.1080/00268976.2013.816796

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