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arXiv · 1305.1872

Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties

Abstract

We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate voltages, prove the high quality of the fabricated devices. Like in previous work, a clear beating pattern of the h/e and h/2e oscillations is present in the magnetoresistance, producing split peaks in the Fourier spectrum. The magnetoresistance evolution is presented and discussed as a function of temperature and gate voltage. It is found that sample specific properties have a pronounced influence on the observed behavior. For example, the interference of different transverse modes or the interplay between h/e oscillations and conductance fluctuations can produce the features mentioned above. In previous work they have occasionally been interpreted as signatures of spin-orbit interaction (SOI)-induced effects. In the light of these results, the unambiguous identification of SOI-induced phase effects in AB rings remains still an open and challenging experimental task.

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Fabrizio Nichele, Yashar Komijani, Szymon Hennel, Thomas Ihn, Klaus Ensslin, Christian Gerl, Werner Wegscheider, Dirk Reuter, Andreas D. Wieck. 2013-05-08. Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties. https://doi.org/10.1088/1367-2630/15/3/033029

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