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arXiv · 1305.0959

Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI

Xiaoxiang Xi·Chunli Ma·Zhenxian Liu·Zhiqiang Chen·Wei Ku·H. Berger·C. Martin·D. B. Tanner·G. L. Carr
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Abstract

We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through pz band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition, and are consistent with a recent theoretical proposal.

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Xiaoxiang Xi, Chunli Ma, Zhenxian Liu, Zhiqiang Chen, Wei Ku, H. Berger, C. Martin, D. B. Tanner, G. L. Carr. 2013-05-04. Signatures of a Pressure-Induced Topological Quantum Phase Transition in BiTeI. https://doi.org/10.1103/physrevlett.111.155701

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