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arXiv · 1304.2853

Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

Yangyang Wang·Jiaxin Zheng·Zeyuan Ni·Ruixiang Fei·Qihang Liu·Ruge Quhe·Chengyong Xu·Jing Zhou·Zhengxiang Gao·Jing Lu
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Abstract

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

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Yangyang Wang, Jiaxin Zheng, Zeyuan Ni, Ruixiang Fei, Qihang Liu, Ruge Quhe, Chengyong Xu, Jing Zhou, Zhengxiang Gao, Jing Lu. 2013-04-10. Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device. https://doi.org/10.1142/s1793292012500373

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