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arXiv · 1304.1243

Benchtop Fabrication of Memristive Atomic Switch Networks

Henry O. Sillin·Eric J. Sandouk·Audrius V. Avizienis·Masakazu Aono·Adam Z. Stieg·James K. Gimzewski
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Abstract

Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.

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Henry O. Sillin, Eric J. Sandouk, Audrius V. Avizienis, Masakazu Aono, Adam Z. Stieg, James K. Gimzewski. 2014-02-28. Benchtop Fabrication of Memristive Atomic Switch Networks. https://doi.org/10.1166/jnn.2014.8636

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