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arXiv · 1303.5770

Driven Geometric Phase Gates with Trapped Ions

A. Lemmer·A. Bermudez·M. B. Plenio
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Abstract

We describe a hybrid laser-microwave scheme to implement two-qubit geometric phase gates in crystals of trapped ions. The proposed gates can attain errors below the fault-tolerance threshold in the presence of thermal, dephasing, laser-phase, and microwave-intensity noise. Moreover, our proposal is technically less demanding than previous schemes, since it does not require a laser arrangement with interferometric stability. The laser beams are tuned close to a single vibrational sideband to entangle the qubits, while strong microwave drivings provide the geometric character to the gate, and thus protect the qubits from these different sources of noise. A thorough analytic and numerical study of the performance of these gates in realistic noisy regimes is presented.

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A. Lemmer, A. Bermudez, M. B. Plenio. 2013-03-22. Driven Geometric Phase Gates with Trapped Ions. https://doi.org/10.1088/1367-2630/15/8/083001

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