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arXiv · 1303.5133

Reverse epitaxy of Ge: ordered and facetted surface patterns

Xin Ou·Adrian Keller·Manfred Helm·Jürgen Fassbender·Stefan Facsko
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Abstract

Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250{\deg}C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high fluence irradiations these patterns exhibit well developed facets. A deterministic nonlinear continuum equation accounting for the effective surface currents due to an Ehrlich-Schwoebel barrier for diffusing vacancies reproduces remarkably well our experimental observations.

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Xin Ou, Adrian Keller, Manfred Helm, Jürgen Fassbender, Stefan Facsko. 2013-03-21. Reverse epitaxy of Ge: ordered and facetted surface patterns. https://doi.org/10.1103/physrevlett.111.016101

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