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arXiv · 1303.2193

Stacked topological insulator built from bismuth-based graphene sheet analogues

Bertold Rasche·Anna Isaeva·Michael Ruck·Sergey Borisenko·Volodymyr Zabolotnyy·Bernd Buchner·Klaus Koepernik·Carmine Ortix·Manuel Richter·Jeroen van den Brink
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Abstract

Commonly materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators (TIs) in 2005 has fundamentally challenged this dichotomy. In a TI, spin-orbit interaction generates a non-trivial topology of the electronic band-structure dictating that its bulk is perfectly insulating, while its surface is fully conducting. The first TI candidate material put forward -graphene- is of limited practical use since its weak spin-orbit interactions produce a band-gap of ~0.01K. Recent reinvestigation of Bi2Se3 and Bi2Te3, however, have firmly categorized these materials as strong three-dimensional TI's. We have synthesized the first bulk material belonging to an entirely different, weak, topological class, built from stacks of two-dimensional TI's: Bi14Rh3I9. Its Bi-Rh sheets are graphene analogs, but with a honeycomb net composed of RhBi8-cubes rather than carbon atoms. The strong bismuth-related spin-orbit interaction renders each graphene-like layer a TI with a 2400K band-gap.

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Bertold Rasche, Anna Isaeva, Michael Ruck, Sergey Borisenko, Volodymyr Zabolotnyy, Bernd Buchner, Klaus Koepernik, Carmine Ortix, Manuel Richter, Jeroen van den Brink. 2013-03-09. Stacked topological insulator built from bismuth-based graphene sheet analogues. https://doi.org/10.1038/nmat3570

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