arXiv · 1302.1291
Flexible transistors exploiting P3HT on paper substrates and graphene oxide films as gate dielectrics: proof of concept
Abstract
In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.
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Luca Valentini, Marta Cardinali, Mirjana Mladjenovic, Petar Uskokovic, Federico Alimenti, Luca Roselli, Josè Kenny. 2013-02-06. Flexible transistors exploiting P3HT on paper substrates and graphene oxide films as gate dielectrics: proof of concept. https://arxiv.org/abs/1302.1291
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