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arXiv · 1301.4043

Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films

M. K. Srivastava·A. Kaur·H. K. Singh
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Abstract

The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.

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M. K. Srivastava, A. Kaur, H. K. Singh. 2013-01-17. Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films. https://arxiv.org/abs/1301.4043

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