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arXiv · 1301.0913

Potential thermoelectric performance of hole-doped Cu2O

Xin Chen·David Parker·Mao-Hua Du·David J. Singh
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Abstract

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory that hole doped Cu2O may be such a material. We find that hole-doped Cu2O has a high thermopower of above 200 microV/K even with doping levels as high as 5.5x10 20 cm-3 at 500 K, mainly attributed to the heavy valence bands of Cu2O. This is reminiscent of the cobaltate family of high performance oxide thermoelectrics and implies that hole-doped Cu2O could be an excellent thermoelectric material if suitably doped.

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Xin Chen, David Parker, Mao-Hua Du, David J. Singh. 2013-01-05. Potential thermoelectric performance of hole-doped Cu2O. https://doi.org/10.1088/1367-2630/15/4/043029

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