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arXiv · 1212.1933

Interacting drift-diffusion theory for photoexcited electron-hole gratings in semiconductor quantum wells

Ka Shen·G. Vignale
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Abstract

Phase-resolved transient grating spectroscopy in semiconductor quantum wells has been shown to be a powerful technique for measuring the electron-hole drag resistivity $\rho_{eh}$, which depends on the Coulomb interaction between the carriers. In this paper we develop the interacting drift-diffusion theory, from which $\rho_{eh}$ can be determined, given the measured mobility of an electron-hole grating. From this theory we predict a cross-over from a high-excitation-density regime, in which the mobility has the "normal" positive value, to a low-density regime, in which Coulomb-drag dominates and the mobility becomes negative. At the crossover point, the mobility of the grating vanishes.

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Ka Shen, G. Vignale. 2012-12-09. Interacting drift-diffusion theory for photoexcited electron-hole gratings in semiconductor quantum wells. https://doi.org/10.1103/physrevlett.110.096601

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