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arXiv · 1211.5215

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO$_{2\pm x}$

Erwin Hildebrandt·Jose Kurian·Lambert Alff
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Abstract

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO$_{2\pm x}$ grown by reactive molecular beam epitaxy (MBE). The oxidation conditions induce a switching between ($\bar{1}11$) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and $p$-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

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Erwin Hildebrandt, Jose Kurian, Lambert Alff. 2012-11-22. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO$_{2\pm x}$. https://doi.org/10.1063/1.4767379

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