A Graphene-based Hot Electron Transistor

Sam Vaziri; Grzegorz Lupina; Christoph Henkel; Anderson D. Smith; Mikael Östling; Jarek Dabrowski; Gunther Lippert; Wolfgang Mehr; Max C. Lemme

doi:10.1016/j.sse.2013.02.008

arXiv · 1211.2949

A Graphene-based Hot Electron Transistor

Sam Vaziri·Grzegorz Lupina·Christoph Henkel·Anderson D. Smith·Mikael Östling·Jarek Dabrowski·Gunther Lippert·Wolfgang Mehr·Max C. Lemme

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Abstract

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.

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BibTeX RIS

Sam Vaziri, Grzegorz Lupina, Christoph Henkel, Anderson D. Smith, Mikael Östling, Jarek Dabrowski, Gunther Lippert, Wolfgang Mehr, Max C. Lemme. 2013-06-02. A Graphene-based Hot Electron Transistor. https://doi.org/10.1016/j.sse.2013.02.008

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