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arXiv · 1210.6592

Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene

Yongjin Lee·Jairo Velasco Jr·David Tran·Fan Zhang·Wenzhong Bao·Lei Jing·Kevin Myhro·Dmitry Smirnov·Chun Ning Lau
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Abstract

We present low temperature transport measurements on dual-gated suspended trilayer graphene in the quantum Hall (QH) regime. We observe QH plateaus at filling factors {\nu}=-8, -2, 2, 6, and 10, in agreement with the full-parameter tight binding calculations. In high magnetic fields, odd-integer plateaus are also resolved, indicating almost complete lifting of the 12-fold degeneracy of the lowest Landau levels (LL). Under an out-of-plane electric field E, we observe degeneracy breaking and transitions between QH plateaus. Interestingly, depending on its direction, E selectively breaks the LL degeneracies in the electron-doped or hole-doped regimes. Our results underscore the rich interaction-induced phenomena in trilayer graphene.

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Yongjin Lee, Jairo Velasco Jr, David Tran, Fan Zhang, Wenzhong Bao, Lei Jing, Kevin Myhro, Dmitry Smirnov, Chun Ning Lau. 2012-10-24. Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene. https://doi.org/10.1021/nl4000757

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