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arXiv · 1210.5809

Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges

Rabaya Basori·K. Das·Prashant Kumar·K. S. Narayan·A. K. Raychaudhuri
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Abstract

We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires.

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Rabaya Basori, K. Das, Prashant Kumar, K. S. Narayan, A. K. Raychaudhuri. 2012-10-22. Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges. https://doi.org/10.1063/1.4792470

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