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arXiv · 1210.5355

Search for spin gapless semiconductors: The case of inverse Heusler compounds

S. Skaftouros·K. Ozdogan·E. Sasioglu·I. Galanakis
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Abstract

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.

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S. Skaftouros, K. Ozdogan, E. Sasioglu, I. Galanakis. 2012-10-19. Search for spin gapless semiconductors: The case of inverse Heusler compounds. https://doi.org/10.1063/1.4775599

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